PART |
Description |
Maker |
M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-1 |
From old datasheet system 262144-BIT CMOS STATIC RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5256DP-45LL-1 M5M5256DP-45LL-I M5M5256DP-45XL-I |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM From old datasheet system
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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CXK5V8257BTM/BYM/BM-10LL CXK5V8257BTM/BYM/BM-70LL |
32768-word x 8-bit High Speed CMOS Static RAM
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SONY
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CXK5T8257BM CXK5T8257BM-10LLX CXK5T8257BM-12LLX CX |
32768-word X 8-bit High Speed CMOS Static RAM
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SONY[Sony Corporation]
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M5M5256DFP-70LLIBM |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
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Renesas Electronics Corporation
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K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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W24LH8S-55LI W24LH8 W24LH8Q-55LE W24LH8Q-55LI W24L |
Normal speed, Very low power CMOS static RAM Organized as 32768 x 8 bits 32K X 8 STANDARD SRAM, 100 ns, PDSO28
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Winbond Electronics, Corp. WINBOND[Winbond]
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CXK5T8257BTM/BYM/BM-12LLX CXK5T8257BTM/BYM/BM-10LL |
32K X 8 STANDARD SRAM, 100 ns, PDSO28 32K X 8 STANDARD SRAM, 120 ns, PDSO28 32768-word x 8-bit High Speed CMOS Static RAM
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SONY
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IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
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Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
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K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的) 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的)在商业和工业温度范围操作
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Samsung Electronic Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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